发明授权
US08531565B2 Front side implanted guard ring structure for backside illuminated image sensor
有权
背面照明图像传感器的前侧植入保护环结构
- 专利标题： Front side implanted guard ring structure for backside illuminated image sensor
- 专利标题（中）： 背面照明图像传感器的前侧植入保护环结构
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申请号： US12710862申请日： 2010-02-23
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公开(公告)号： US08531565B2公开(公告)日： 2013-09-10
- 发明人: Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
- 申请人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hautman & Ham, LLP
- 主分类号： H04N5/335
- IPC分类号： H04N5/335 ; H04N5/217
摘要：
An image sensor includes a semiconductor substrate, a guard ring structure in the substrate, and at least one pixel surrounded by the guard ring structure. The guard ring structure is implanted in the substrate by high-energy implantation.
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