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1.发明授权Front side implanted guard ring structure for backside illuminated image sensor 有权背面照明图像传感器的前侧植入保护环结构公开(公告)号：US08531565B2
公开(公告)日：2013-09-10
申请号：US12710862
申请日：2010-02-23
CPC分类号： H01L31/02005 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L27/14698 , H01L31/18
摘要： An image sensor includes a semiconductor substrate, a guard ring structure in the substrate, and at least one pixel surrounded by the guard ring structure. The guard ring structure is implanted in the substrate by high-energy implantation.
摘要翻译： 图像传感器包括半导体衬底，衬底中的保护环结构和由保护环结构包围的至少一个像素。 保护环结构通过高能量注入植入衬底。
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公开(公告)号：US08202791B2
公开(公告)日：2012-06-19
申请号：US12404852
申请日：2009-03-16
IPC分类号： H01L21/425
CPC分类号： H01L21/266 , H01L21/26513 , H01L29/66537
摘要： A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first hard mask layer over the substrate; patterning the first hard mask layer to form one or more first openings having a first critical dimension; performing a first implantation process on the substrate; forming a second hard mask layer over the first hard mask layer to form one or more second openings having a second critical dimension; and performing a second implantation process.
摘要翻译： 公开了一种用于制造集成电路器件的方法。 该方法包括提供基板; 在衬底上形成第一硬掩模层; 图案化第一硬掩模层以形成具有第一临界尺寸的一个或多个第一开口; 在所述基板上执行第一注入工艺; 在所述第一硬掩模层上形成第二硬掩模层以形成具有第二临界尺寸的一个或多个第二开口; 以及执行第二植入过程。
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公开(公告)号：US20100243868A1
公开(公告)日：2010-09-30
申请号：US12415580
申请日：2009-03-31
申请人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
发明人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
IPC分类号： H01L31/0232 , B32B37/02
CPC分类号： H01L27/1462 , H01L27/1464 , H01L27/14685 , H01L31/02165
摘要： Provided is an image sensor device. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index.
摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的装置基板。 器件衬底具有可以感测具有相应波长的辐射的辐射感测区域。 图像传感器还包括形成在器件衬底的前侧上的第一层。 第一层具有第一折射率和第一折射率的函数的第一厚度。 图像传感器还具有形成在第一层上的第二层。 第二层与第一层不同，具有第二折射率和第二折射率的函数的第二厚度。
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公开(公告)号：US08227288B2
公开(公告)日：2012-07-24
申请号：US12413752
申请日：2009-03-30
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的装置基板。 该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。 该方法还包括在器件衬底的背面上形成透明层。 该方法还包括在透明层中形成开口，该开口与隔离结构对准。 该方法还包括用不透明材料填充开口。
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公开(公告)号：US20100213560A1
公开(公告)日：2010-08-26
申请号：US12708167
申请日：2010-02-18
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/18
CPC分类号： H01L27/14636 , H01L23/481 , H01L27/14621 , H01L27/1464 , H01L27/14683
摘要： A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.
摘要翻译： 半导体图像传感器装置包括第一和第二半导体衬底。 像素阵列和控制电路形成在第一基板的第一表面中。 在第一基板的第一表面上形成互连层，并将控制电路电连接到像素阵列。 顶部导电层形成在互连层上，以经由互连层与至少一个控制电路或像素阵列电连接。 第二基板的表面接合到顶部导电层。 导电硅通孔（TSV）通过第二衬底，并且与顶部导电层具有电连接性。 端子形成在第二基板的相对表面上，并电连接到TSV。
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公开(公告)号：US20100184242A1
公开(公告)日：2010-07-22
申请号：US12355211
申请日：2009-01-16
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
IPC分类号： H01L21/76 , H01L31/02 , H01L31/0224
CPC分类号： H01L21/76237 , H01L21/2652 , H01L27/0629 , H01L27/1463 , H01L27/14683
摘要： Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.
摘要翻译： 提供了将掺杂剂离子注入集成电路的方法。 该方法包括在衬底中形成第一像素和第二像素，在衬底上形成蚀刻停止层，在蚀刻停止层上方形成硬掩模层，图案化硬掩模层以包括第一像素与第二像素之间的开口 并且通过所述开口植入多个掺杂剂以形成隔离特征。
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7.发明授权Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the same 有权具有折射率依赖层厚度的背面照明图像传感器装置及其形成方法公开(公告)号：US08604405B2
公开(公告)日：2013-12-10
申请号：US12415580
申请日：2009-03-31
申请人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
发明人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
CPC分类号： H01L27/1462 , H01L27/1464 , H01L27/14685 , H01L31/02165
摘要： Provided is an image sensor device. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index.
摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的装置基板。 器件衬底具有可以感测具有相应波长的辐射的辐射感测区域。 图像传感器还包括形成在器件衬底的前侧上的第一层。 第一层具有第一折射率和第一折射率的函数的第一厚度。 图像传感器还具有形成在第一层上的第二层。 第二层与第一层不同，具有第二折射率和第二折射率的函数的第二厚度。
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公开(公告)号：US07968424B2
公开(公告)日：2011-06-28
申请号：US12355211
申请日：2009-01-16
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
IPC分类号： H01L21/76
CPC分类号： H01L21/76237 , H01L21/2652 , H01L27/0629 , H01L27/1463 , H01L27/14683
摘要： Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.
摘要翻译： 提供了将掺杂剂离子注入集成电路的方法。 该方法包括在衬底中形成第一像素和第二像素，在衬底上形成蚀刻停止层，在蚀刻停止层上方形成硬掩模层，图案化硬掩模层以包括第一像素与第二像素之间的开口 并且通过所述开口植入多个掺杂剂以形成隔离特征。
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公开(公告)号：US08674467B2
公开(公告)日：2014-03-18
申请号：US13545450
申请日：2012-07-10
IPC分类号： H01L27/146 , H01L31/00
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的装置基板。 该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。 该方法还包括在器件衬底的背面上形成透明层。 该方法还包括在透明层中形成开口，该开口与隔离结构对准。 该方法还包括用不透明材料填充开口。
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公开(公告)号：US20120273914A1
公开(公告)日：2012-11-01
申请号：US13545450
申请日：2012-07-10
IPC分类号： H01L31/02
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的装置基板。 该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。 该方法还包括在器件衬底的背面上形成透明层。 该方法还包括在透明层中形成开口，该开口与隔离结构对准。 该方法还包括用不透明材料填充开口。
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