发明授权
- 专利标题： Magnetic memory
- 专利标题（中）： 磁记忆
-
申请号： US13426139申请日： 2012-03-21
-
公开(公告)号： US08531875B2公开(公告)日： 2013-09-10
- 发明人: Satoshi Yanagi , Eiji Kitagawa , Masahiko Nakayama , Jyunichi Ozeki , Hisanori Aikawa , Naoharu Shimomura , Masatoshi Yoshikawa , Minoru Amano , Shigeki Takahashi , Hiroaki Yoda
- 申请人： Satoshi Yanagi , Eiji Kitagawa , Masahiko Nakayama , Jyunichi Ozeki , Hisanori Aikawa , Naoharu Shimomura , Masatoshi Yoshikawa , Minoru Amano , Shigeki Takahashi , Hiroaki Yoda
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; G11C11/15
摘要：
According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.
公开/授权文献
- US20120230091A1 MAGNETIC MEMORY 公开/授权日：2012-09-13
信息查询
IPC分类:
