发明授权
- 专利标题: Substrate having a charged zone in an insulating buried layer
- 专利标题(中): 衬底在绝缘掩埋层中具有带电区域
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申请号: US12865838申请日: 2008-03-13
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公开(公告)号: US08535996B2公开(公告)日: 2013-09-17
- 发明人: Mohamad Shaheen , Frederic Allibert , Gweltaz Gaudin , Fabrice Lallement , Didier Landru , Karin Landry , Carlos Mazure
- 申请人: Mohamad Shaheen , Frederic Allibert , Gweltaz Gaudin , Fabrice Lallement , Didier Landru , Karin Landry , Carlos Mazure
- 申请人地址: FR Bernin
- 专利权人: SOITEC
- 当前专利权人: SOITEC
- 当前专利权人地址: FR Bernin
- 代理机构: TraskBritt
- 国际申请: PCT/IB2008/052203 WO 20080313
- 国际公布: WO2009/112894 WO 20090917
- 主分类号: H01L21/84
- IPC分类号: H01L21/84
摘要:
Embodiments of the invention relate to substrates comprising a base wafer, an insulating layer and a top semiconductor layer, wherein the insulating layer comprises at least a zone wherein a density of charges is in absolute value higher than 1010 charges/cm2. The invention also relates to processes for making such substrates.