发明授权
- 专利标题： Stress memorization process improvement for improved technology performance
- 专利标题（中）： 应力记忆过程改进，提高技术性能
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申请号： US12902624申请日： 2010-10-12
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公开(公告)号： US08535999B2公开(公告)日： 2013-09-17
- 发明人: Lahir Adam , Bruce B. Doris , Sanjay Mehta , Zhengmao Zhu
- 申请人： Lahir Adam , Bruce B. Doris , Sanjay Mehta , Zhengmao Zhu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Novak Druce Connolly Bove + Quigg LLP
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
Semiconductor substrate with a deformed gate region and a method for the fabrication thereof. The semiconductor substrate has improved device performance compared to devices without a deformed gate region and decreased dopant loss compared to devices with deformed source/drain regions.
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