发明授权
- 专利标题： Method for producing a semiconductor device have fin-shaped semiconductor regions
- 专利标题（中）： 制造半导体器件的方法具有鳍状半导体区域
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申请号： US13185221申请日： 2011-07-18
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公开(公告)号： US08536000B2公开(公告)日： 2013-09-17
- 发明人: Yuichiro Sasaki , Keiichi Nakamoto , Katsumi Okashita , Hisataka Kanada , Bunji Mizuno
- 申请人： Yuichiro Sasaki , Keiichi Nakamoto , Katsumi Okashita , Hisataka Kanada , Bunji Mizuno
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2007-195860 20070727; JP2008-198477 20080731
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/8234 ; H01L21/336
摘要：
First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1′ of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2′ of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.
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