Invention Grant
- Patent Title: Method for making a semi-conducting substrate located on an insulation layer
- Patent Title (中): 制造位于绝缘层上的半导体衬底的方法
-
Application No.: US12679271Application Date: 2008-09-26
-
Publication No.: US08536027B2Publication Date: 2013-09-17
- Inventor: Aomar Halimaoui , Daniel Bensahel
- Applicant: Aomar Halimaoui , Daniel Bensahel
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR0757916 20070928
- International Application: PCT/FR2008/051717 WO 20080926
- International Announcement: WO2009/050379 WO 20090423
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/02
Abstract:
A method for making a silicon layer extending on an insulation layer, including the steps of forming a silicon-germanium layer on at least a portion of a silicon wafer; transforming portions of the silicon-germanium layer into porous silicon pads; growing a monocrystalline silicon layer on the silicon-germanium layer and on the porous silicon pads; removing the silicon-germanium layer; oxidizing the porous silicon pads; and depositing an insulation material on the silicon layer.
Public/Granted literature
- US20100289123A1 METHOD FOR MAKING A SEMI-CONDUCTING SUBSTRATE LOCATED ON AN INSULATION LAYER Public/Granted day:2010-11-18
Information query
IPC分类:
