发明授权
- 专利标题： Silicon-on-insulator substrate and method of forming
- 专利标题（中）： 绝缘体上硅衬底及其成型方法
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申请号： US13363603申请日： 2012-02-01
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公开(公告)号： US08536035B2公开(公告)日： 2013-09-17
- 发明人: Alan B. Botula , Mark D. Jaffe , Alvin J. Joseph , Kenneth F. McAvey , Gerd Pfeiffer , Richard A. Phelps
- 申请人： Alan B. Botula , Mark D. Jaffe , Alvin J. Joseph , Kenneth F. McAvey , Gerd Pfeiffer , Richard A. Phelps
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Hoffman Warnick LLC
- 代理商 Michael J. LeStrange
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
Silicon-on-insulator (SOI) structures and related methods of forming such structures. In one case, a method includes providing a silicon-on-insulator (SOI) handle substrate having: a substantially uniform resistivity profile along a depth of the handle substrate; and an interstitial oxygen (Oi) concentration of less than approximately 10 parts per million atoms (ppma). The method further includes counter-doping a surface region of the handle, causing the surface region to have a resistivity greater than approximately 3 kOhm-cm, and joining the surface region of the handle substrate with a donor wafer.
公开/授权文献
- US20130196493A1 SILICON-ON-INSULATOR SUBSTRATE AND METHOD OF FORMING 公开/授权日：2013-08-01