发明授权
- 专利标题： Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
- 专利标题（中）： 超高选择性掺杂无定形碳可剥离硬掩模开发和集成
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申请号： US13249794申请日： 2011-09-30
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公开(公告)号： US08536065B2公开(公告)日： 2013-09-17
- 发明人: Martin Jay Seamons , Sudha Rathi , Kwangduk Douglas Lee , Deenesh Padhi , Bok Hoen Kim , Chiu Chan
- 申请人： Martin Jay Seamons , Sudha Rathi , Kwangduk Douglas Lee , Deenesh Padhi , Bok Hoen Kim , Chiu Chan
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.
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