发明授权
- 专利标题： Method to reduce threshold voltage variability with through gate well implant
- 专利标题（中）： 通过栅极井注入降低阈值电压变化的方法
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申请号： US13608860申请日： 2012-09-10
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公开(公告)号： US08536649B2公开(公告)日： 2013-09-17
- 发明人: Geng Wang , Joseph Ervin , Jeffrey B. Johnson , Paul C. Parries
- 申请人： Geng Wang , Joseph Ervin , Jeffrey B. Johnson , Paul C. Parries
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
The present disclosure provides a semiconductor device that may include a substrate including a semiconductor layer overlying an insulating layer. A gate structure that is present on a channel portion of the semiconductor layer. A first dopant region is present in the channel portion of the semiconductor layer, in which the peak concentration of the first dopant region is present within the lower portion of the gate conductor and the upper portion of the semiconductor layer. A second dopant region is present in the channel portion of the semiconductor layer, in which the peak concentration of the second dopant region is present within the lower portion of the semiconductor layer.
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