Invention Grant
- Patent Title: Through substrate via with embedded decoupling capacitor
- Patent Title (中): 通过衬底通孔与嵌入式去耦电容器
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Application No.: US13654245Application Date: 2012-10-17
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Publication No.: US08536678B2Publication Date: 2013-09-17
- Inventor: Matthew Michael Nowak , Shiqun Gu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- Main IPC: H01L29/92
- IPC: H01L29/92
Abstract:
A method of manufacturing a semiconductor die having a substrate with a front side and a back side includes fabricating openings for through substrate vias on the front side of the semiconductor die. The method also includes depositing a first conductor in the through substrate vias, depositing a dielectric on the first conductor and depositing a second conductor on the dielectric. The method further includes depositing a protective insulator layer on the back side of the substrate covering the through substrate vias.
Public/Granted literature
- US20130040436A1 THROUGH SUBSTRATE VIA WITH EMBEDDED DECOUPLING CAPACITOR Public/Granted day:2013-02-14
Information query
IPC分类:
