Invention Grant
US08537599B2 Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell
有权
存储器单元，非易失性存储器阵列，操作存储器单元的方法，从存储器单元读取和写入的方法，以及编程存储器单元的方法
- Patent Title: Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell
- Patent Title (中): 存储器单元，非易失性存储器阵列，操作存储器单元的方法，从存储器单元读取和写入的方法，以及编程存储器单元的方法
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Application No.: US13612513Application Date: 2012-09-12
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Publication No.: US08537599B2Publication Date: 2013-09-17
- Inventor: Bhaskar Srinivasan , Gurtej S. Sandhu
- Applicant: Bhaskar Srinivasan , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed.
Public/Granted literature
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