Invention Grant
US08541256B2 Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays
失效
用于制造HgCdTe光电二极管阵列的基于镉分子束的退火方法
- Patent Title: Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays
- Patent Title (中): 用于制造HgCdTe光电二极管阵列的基于镉分子束的退火方法
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Application No.: US13421860Application Date: 2012-03-16
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Publication No.: US08541256B2Publication Date: 2013-09-24
- Inventor: Chang-Feng Wan
- Applicant: Chang-Feng Wan
- Main IPC: H01L31/18
- IPC: H01L31/18
Abstract:
In the preferred embodiment of the present invention, narrow bandgap II-VI compound semiconductor HgxCd1-xTe (0.1≦x≦0.5) (HgCdTe) wafers are annealed under Cd supersaturated conditions by exposing the HgCdTe planar or mesa surfaces to a Cd molecular beam in a vacuum deposition system before, during, and/or after anneals performed during individual photodiode fabrication process steps or HgCdTe epitaxial growth steps for eliminating or neutralizing the bulk or interfacial defects.
Public/Granted literature
- US20120264254A1 METHOD OF CADMIUM MOLECULAR BEAM BASED ANNEALS FOR MANUFACTURE OF HGCDTE PHOTODIODE ARRAYS Public/Granted day:2012-10-18
Information query
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