Invention Grant
- Patent Title: X-ray detector and fabrication method thereof
- Patent Title (中): X射线检测器及其制造方法
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Application No.: US12553982Application Date: 2009-09-03
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Publication No.: US08541750B2Publication Date: 2013-09-24
- Inventor: Yu-Cheng Chen , An-Thung Cho , Ching-Sang Chuang , Chia-Tien Peng
- Applicant: Yu-Cheng Chen , An-Thung Cho , Ching-Sang Chuang , Chia-Tien Peng
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: AU Optronics Corp.
- Current Assignee: AU Optronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW98105087A 20090218
- Main IPC: G01T1/20
- IPC: G01T1/20
Abstract:
A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.
Public/Granted literature
- US20100207033A1 X-RAY DETECTOR AND FABRICATION METHOD THEREOF Public/Granted day:2010-08-19
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