发明授权
- 专利标题： Semiconductor device and method of manufacture thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12918542申请日： 2009-02-26
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公开(公告)号： US08541812B2公开(公告)日： 2013-09-24
- 发明人: Philippe Meunier-Beillard , Mark C. J. C. M. Kramer , Johannes J. T. M. Donkers , Guillaume Boccardi
- 申请人： Philippe Meunier-Beillard , Mark C. J. C. M. Kramer , Johannes J. T. M. Donkers , Guillaume Boccardi
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP08102138 20080228; EP08102139 20080228
- 国际申请： PCT/IB2009/050782 WO 20090226
- 国际公布： WO2009/107087 WO 20090903
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A semiconductor device (10) comprising a bipolar transistor and a field effect transistor within a semiconductor body (1) comprising a projecting mesa (5) within which are at least a portion of a collector region (22d and 22e) and a base region (33d) of the bipolar transistor. The bipolar transistor is provided with a first insulating cavity (92) provided in the collector region (22d and 22e). The base region (33d) is narrower in the plane of the substrate than the collector region (22d and 22e) due to a second insulating cavity (94) provided around the base region (33d) and between the collector region (22d and 22e) and the emitter region (4). By blocking diffusion from the base region the first insulating cavity (92) provides a reduction in the base collector capacitance and can be described as defining the base contact.
公开/授权文献
- US20110215417A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF 公开/授权日：2011-09-08
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