Invention Grant
US08541857B2 Backside illumination CMOS image sensors and methods of manufacturing the same
有权
背面照明CMOS图像传感器及其制造方法
- Patent Title: Backside illumination CMOS image sensors and methods of manufacturing the same
- Patent Title (中): 背面照明CMOS图像传感器及其制造方法
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Application No.: US12984404Application Date: 2011-01-04
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Publication No.: US08541857B2Publication Date: 2013-09-24
- Inventor: Jung-chak Ahn , Kyung-ho Lee
- Applicant: Jung-chak Ahn , Kyung-ho Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0011180 20100205
- Main IPC: H01L31/18
- IPC: H01L31/18

Abstract:
Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face.
Public/Granted literature
- US20110193147A1 BACKSIDE ILLUMINATION CMOS IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2011-08-11
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