The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6−)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.