发明授权
US08542541B2 Memory architecture having two independently controlled voltage pumps
有权
具有两个独立控制的电压泵的存储架构
- 专利标题： Memory architecture having two independently controlled voltage pumps
- 专利标题（中）： 具有两个独立控制的电压泵的存储架构
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申请号： US13407660申请日： 2012-02-28
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公开(公告)号： US08542541B2公开(公告)日： 2013-09-24
- 发明人: Ryan T. Hirose , Fredrick Jenne , Vijay Srinivasaraghavan , Igor G. Kouznetsov , Paul Fredrick Ruths , Cristinel Zonte , Bogdan Georgescu , Leonard Vasile Gitlan , James Paul Myers
- 申请人： Ryan T. Hirose , Fredrick Jenne , Vijay Srinivasaraghavan , Igor G. Kouznetsov , Paul Fredrick Ruths , Cristinel Zonte , Bogdan Georgescu , Leonard Vasile Gitlan , James Paul Myers
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
In embodiments described herein, a memory architecture has an array of non-volatile memory cells and a pair of independently controlled voltage pumps. The pair of voltage pumps is coupled for supplying both positive and negative voltage biases to the memory array during program and erase operations, such that a sum of the magnitudes of the positive and negative voltage biases is applied across a storage node of an accessed memory cell.
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