发明授权
- 专利标题： Temperature-controlled purge gate valve for chemical vapor deposition chamber
- 专利标题（中）： 用于化学气相沉积室的温度控制清洗闸阀
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申请号： US12305553申请日： 2007-11-16
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公开(公告)号： US08545628B2公开(公告)日： 2013-10-01
- 发明人: Chantal Arena , Christiaan Werkhoven
- 申请人： Chantal Arena , Christiaan Werkhoven
- 申请人地址： FR Bernin
- 专利权人： Soitec
- 当前专利权人： Soitec
- 当前专利权人地址： FR Bernin
- 代理机构： Winston & Strawn LLP
- 国际申请： PCT/US2007/084930 WO 20071116
- 国际公布： WO2008/130448 WO 20081030
- 主分类号： C30B35/00
- IPC分类号： C30B35/00 ; C30B13/28 ; C30B23/00 ; C23C16/00
摘要：
The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.
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