发明授权
US08546207B2 Method for fabricating semiconductor wafers for the integration of silicon components with HEMTs, and appropriate semiconductor layer arrangement
有权
用于制造用于与HEMT集成硅部件的半导体晶片的方法以及适当的半导体层布置
- 专利标题： Method for fabricating semiconductor wafers for the integration of silicon components with HEMTs, and appropriate semiconductor layer arrangement
- 专利标题（中）： 用于制造用于与HEMT集成硅部件的半导体晶片的方法以及适当的半导体层布置
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申请号： US13505101申请日： 2010-11-02
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公开(公告)号： US08546207B2公开(公告)日： 2013-10-01
- 发明人: Gabriel Kittler , Ralf Lerner
- 申请人： Gabriel Kittler , Ralf Lerner
- 申请人地址： DE Erfurt
- 专利权人： X-FAB Semiconductor Foundries AG
- 当前专利权人： X-FAB Semiconductor Foundries AG
- 当前专利权人地址： DE Erfurt
- 代理机构： Hunton & Williams
- 优先权： DE102009051521 20091031
- 国际申请： PCT/EP2010/066656 WO 20101102
- 国际公布： WO2011/051500 WO 20110505
- 主分类号： H01L21/338
- IPC分类号： H01L21/338
摘要：
The invention describes a method for fabricating silicon semiconductor wafers with the layer structures from III-V semiconductor layers for the integration of HEMTs based on semiconductor III-V layers with silicon components. SOI silicon semiconductor wafers are used, the active semiconductor layer of which has the III-V semiconductor layers (24) of the HEMT design (2) placed on it stretching over two mutually insulated regions (24a, 24b) of the active silicon layer. An appropriate layer arrangement is likewise disclosed.
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