Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12794120Application Date: 2010-06-04
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Publication No.: US08546210B2Publication Date: 2013-10-01
- Inventor: Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
- Applicant: Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-338229 20041122
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
Public/Granted literature
- US20100237354A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-09-23
Information query
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