Invention Grant
- Patent Title: Manufacturing method of semiconductor device with amorphous silicon layer formation
- Patent Title (中): 具有非晶硅层形成的半导体器件的制造方法
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Application No.: US12364211Application Date: 2009-02-02
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Publication No.: US08546247B2Publication Date: 2013-10-01
- Inventor: Hidenobu Fukutome , Youichi Momiyama
- Applicant: Hidenobu Fukutome , Youichi Momiyama
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-165225 20060614
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A method of manufacturing a semiconductor device, in which an amorphous silicon layer is formed into a shape of a gate electrode of a MOS transistor, and then impurity is implanted to a surface of a silicon substrate from a diagonal direction using the amorphous silicon layer as a mask.
Public/Granted literature
- US20090227085A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2009-09-10
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