发明授权
- 专利标题： Nitrogen doped aluminum oxide resistive random access memory
- 专利标题（中）： 氮掺杂氧化铝电阻随机存取存储器
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申请号： US13469556申请日： 2012-05-11
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公开(公告)号： US08546781B2公开(公告)日： 2013-10-01
- 发明人: Siu-Weng S. Wong , Wanki Kim , Zhiping Zhang , Sung Il Park
- 申请人： Siu-Weng S. Wong , Wanki Kim , Zhiping Zhang , Sung Il Park
- 申请人地址： US CA Palo Alto
- 专利权人： The Board of Trustees of the Leland Stanford Junior University
- 当前专利权人： The Board of Trustees of the Leland Stanford Junior University
- 当前专利权人地址： US CA Palo Alto
- 代理机构： Lumen Patent Firm
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A resistive random access memory (RRAM) device is provided that includes a first electrode, a second electrode, and a resistance-change film disposed between the first electrode and the second electrode, where the resistance-change film includes an atomic ratio of aluminum, oxygen and nitrogen.
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