发明授权
- 专利标题: Optoelectronic light exposure memory
- 专利标题(中): 光电曝光记忆体
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申请号: US13259196申请日: 2009-09-29
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公开(公告)号: US08546898B2公开(公告)日: 2013-10-01
- 发明人: Lars Thylen , Alexandre Bratkovski , Shih-Yuan Wang , R. Stanley Williams
- 申请人: Lars Thylen , Alexandre Bratkovski , Shih-Yuan Wang , R. Stanley Williams
- 申请人地址: US TX Houston
- 专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人地址: US TX Houston
- 国际申请: PCT/US2009/062589 WO 20090929
- 国际公布: WO2011/053297 WO 20110505
- 主分类号: H01L27/14
- IPC分类号: H01L27/14 ; G11C19/08 ; G11C17/06 ; G11C11/00
摘要:
An optoelectronic memory cell has a transparent top electrode, a photoactive layer, a latching layer, and a bottom electrode. The photoactive layer absorbs photons transmitted through the top electrode and generates charge carriers. During light exposure, the latching layer changes its resistance under an applied electric field in response to the generation of charge carriers in the photoactive layer.
公开/授权文献
- US20120012810A1 OPTOELECTRONIC LIGHT EXPOSURE MEMORY 公开/授权日:2012-01-19
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