发明授权
- 专利标题： Multilayer dielectric memory device
- 专利标题（中）： 多层介质存储器件
-
申请号： US12976266申请日： 2010-12-22
-
公开(公告)号： US08546944B2公开(公告)日： 2013-10-01
- 发明人: Kyu S. Min
- 申请人： Kyu S. Min
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/4763
摘要：
A memory device has multiple dielectric barrier regions. A memory device has multiple barrier regions that provide higher or lower current-voltage slope compared to a memory device having a single barrier region. The device also has electrode regions that provide further control over the current-voltage relationship.
公开/授权文献
- US20120161318A1 MULTILAYER DIELECTRIC MEMORY DEVICE 公开/授权日：2012-06-28
信息查询
IPC分类:
