发明授权
- 专利标题： Memory device having a magnetic layer with a perpendicular direction of magnetization relative to a direction of magnetization of a fixed magnetization layer
- 专利标题（中）： 存储器件具有相对于固定磁化层的磁化方向具有垂直磁化方向的磁性层
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申请号： US13098996申请日： 2011-05-02
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公开(公告)号： US08547731B2公开(公告)日： 2013-10-01
- 发明人: Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
- 申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Dentons US LLP
- 优先权： JP2010-136163 20100615
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/15 ; H01L29/82
摘要：
Disclosed herein is a memory device, including: a memory element including a memory layer for holding therein information in accordance with a magnetization state of a magnetic material, a fixed magnetization layer which is provided on the memory layer through a non-magnetic layer and whose direction of a magnetization is fixed to a direction parallel with a film surface, and a magnetic layer which is provided on a side opposite to the fixed magnetization layer relative to the memory layer through a non-magnetic layer and whose direction of a magnetization is a direction vertical to the film surface; and a wiring through which a current is caused to flow through the memory element in a direction of lamination of the layers of the memory element.
公开/授权文献
- US20110305077A1 MEMORY DEVICE 公开/授权日：2011-12-15
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