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发明授权
US08547763B2 Memory cell, methods of manufacturing memory cell, and memory device having the same 有权
存储单元，存储单元的制造方法以及具有该单元的存储器件

Memory cell, methods of manufacturing memory cell, and memory device having the same
摘要：
A memory cell includes a selection transistor on a substrate and an antifuse on the substrate. The selection transistor includes a first gate connected to a read word line, a first gate insulation layer that insulates the first gate from the substrate, a first source region connected to a bit line, and a first drain region, an impurity concentration of the first drain region being lower than an impurity concentration of the first source region. The antifuse includes a first electrode connected to a program word line and a second electrode connected to the selection transistor.
摘要（中）：

存储单元包括衬底上的选择晶体管和衬底上的反熔丝。 选择晶体管包括连接到读字线的第一栅极，将第一栅极与衬底绝缘的第一栅极绝缘层，连接到位线的第一源极区域和第一漏极区域，第一漏极区域的杂质浓度 漏极区域低于第一源极区域的杂质浓度。 反熔丝包括连接到编程字线的第一电极和连接到选择晶体管的第二电极。

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