Invention Grant
- Patent Title: Semiconductor chip and radio frequency circuit
- Patent Title (中): 半导体芯片和射频电路
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Application No.: US12527877Application Date: 2007-11-15
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Publication No.: US08548416B2Publication Date: 2013-10-01
- Inventor: Takuya Suzuki , Kenji Kawakami , Ko Kanaya , Yoichi Kitamura
- Applicant: Takuya Suzuki , Kenji Kawakami , Ko Kanaya , Yoichi Kitamura
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-093472 20070330
- International Application: PCT/JP2007/072211 WO 20071115
- International Announcement: WO2008/129713 WO 20081030
- Main IPC: H04B1/28
- IPC: H04B1/28
Abstract:
A two-terminal semiconductor device is formed on a semiconductor substrate. Two wiring patterns are respectively connected to terminals of the semiconductor device, and two electrode pads are respectively connected to the wiring patterns for connecting a signal input/output circuit formed on a separate substrate. Two parallel wiring patterns are respectively connected to the wiring patterns, and two reactance-circuit connection electrode pads are respectively connected to the parallel wiring patterns for electrically connecting a reactance circuit formed on the separate substrate separately from the signal input/output circuit.
Public/Granted literature
- US20100117711A1 SEMICONDUCTOR CHIP AND RADIO FREQUENCY CIRCUIT Public/Granted day:2010-05-13
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