发明授权
- 专利标题： Semiconductor device and method for manufacturing semiconductor device
- 专利标题（中）： 半导体装置及半导体装置的制造方法
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申请号： US12835903申请日： 2010-07-14
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公开(公告)号： US08552423B2公开(公告)日： 2013-10-08
- 发明人: Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Tatsuya Takahashi
- 申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Tatsuya Takahashi
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2009-169599 20090718
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
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