发明授权
- 专利标题： Schottky barrier diode and MOSFET semiconductor device
- 专利标题（中）： 肖特基势垒二极管和MOSFET半导体器件
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申请号： US13236588申请日： 2011-09-19
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公开(公告)号： US08552476B2公开(公告)日： 2013-10-08
- 发明人: Tsuyoshi Ohta , Masatoshi Arai , Miwako Suzuki
- 申请人： Tsuyoshi Ohta , Masatoshi Arai , Miwako Suzuki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Patterson & Sheridan, LLP
- 优先权： JPP2011-67475 20110325
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L29/66 ; H01L29/76 ; H01L29/47
摘要：
A semiconductor layer has a second impurity concentration. First trenches are formed in the semiconductor layer to extend downward from an upper surface of the semiconductor layer. Each of insulation layers is formed along each of the inner walls of the first trenches. Each of conductive layers is formed to bury each of the first trenches via each of the insulation layers, and extends downward from the upper surface of the semiconductor layer to a first position. A first semiconductor diffusion layer reaches a second position from the upper surface of the semiconductor layer, is positioned between the first trenches, and has a third impurity concentration lower than the second impurity concentration. A length from the upper surface of the semiconductor layer to the second position is equal to or less than half a length from the upper surface of the semiconductor layer to the first position.
公开/授权文献
- US20120241853A1 SEMICONDUCTOR DEVICE 公开/授权日：2012-09-27
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