Invention Grant
US08552521B2 Semiconductor package to remove power noise using ground impedance
有权
使用接地阻抗来消除功率噪声的半导体封装
- Patent Title: Semiconductor package to remove power noise using ground impedance
- Patent Title (中): 使用接地阻抗来消除功率噪声的半导体封装
-
Application No.: US12639228Application Date: 2009-12-16
-
Publication No.: US08552521B2Publication Date: 2013-10-08
- Inventor: Eun-seok Song , Hee-seok Lee , Sung-woo Park
- Applicant: Eun-seok Song , Hee-seok Lee , Sung-woo Park
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Stanzione & Kim, LLP
- Priority: KR10-2009-0031430 20090410
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
A semiconductor package removes power noise by using a ground impedance. The semiconductor package includes an analog circuit block, a digital circuit block, an analog ground impedance structure, a digital ground impedance structure, and an integrated ground. The integrated ground and the analog circuit block are electrically connected via the analog ground impedance structure, and the integrated ground and the digital circuit block are electrically connected via the digital ground impedance structure, and an inductance of the analog ground impedance structure is greater than an inductance of the digital ground impedance structure.
Public/Granted literature
- US20100258905A1 SEMICONDUCTOR PACKAGE TO REMOVE POWER NOISE USING GROUND IMPEDANCE Public/Granted day:2010-10-14
Information query
IPC分类: