A vertical transient voltage suppressor for protecting an electronic device is disclosed. The vertical transient voltage includes a conductivity type substrate having highly doping concentration; a first type lightly doped region is arranged on the conductivity type substrate, wherein the conductivity type substrate and the first type lightly doped region respectively belong to opposite types; a first type heavily doped region and a second type heavily doped region are arranged in the first type lightly doped region, wherein the first and second type heavily doped regions and the conductivity type substrate belong to same types; and a deep first type heavily doped region is arranged on the conductivity type substrate and neighbors the first type lightly doped region, wherein the deep first type heavily doped region and the first type lightly doped region respectively belong to opposite types, and wherein the deep first type heavily doped region is coupled to the first type heavily doped region.