发明授权
US08553444B2 Variable resistance nonvolatile storage device and method of forming memory cell
有权
可变电阻非易失性存储器件和形成存储单元的方法
- 专利标题： Variable resistance nonvolatile storage device and method of forming memory cell
- 专利标题（中）： 可变电阻非易失性存储器件和形成存储单元的方法
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申请号： US12743472申请日： 2009-08-20
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公开(公告)号： US08553444B2公开(公告)日： 2013-10-08
- 发明人: Shunsaku Muraoka , Yoshihiko Kanzawa , Satoru Mitani , Koji Katayama , Kazuhiko Shimakawa , Satoru Fujii , Takeshi Takagi
- 申请人： Shunsaku Muraoka , Yoshihiko Kanzawa , Satoru Mitani , Koji Katayama , Kazuhiko Shimakawa , Satoru Fujii , Takeshi Takagi
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2008-212256 20080820
- 国际申请： PCT/JP2009/003969 WO 20090820
- 国际公布： WO2010/021134 WO 20100225
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate (301), (ii) a variable resistance element (309) having: lower and upper electrodes (309a, 309c); and a variable resistance layer (309b) whose resistance value reversibly varies based on voltage signals each of which has a different polarity and is applied between the electrodes (309a, 309c), and (iii) a MOS transistor (317) formed on the substrate (301), wherein the variable resistance layer (309b) includes: oxygen-deficient transition metal oxide layers (309b-1, 309b-2) having compositions MOX and MOy (where x
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