发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
-
申请号: US13602878申请日: 2012-09-04
-
公开(公告)号: US08553483B2公开(公告)日: 2013-10-08
- 发明人: Hiroyuki Takahashi , Masahiro Yoshida
- 申请人: Hiroyuki Takahashi , Masahiro Yoshida
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Foley & Lardner LLP
- 优先权: JP2009-253696 20091105; JP2010-188704 20100825
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C7/02 ; G11C7/10
摘要:
A semiconductor memory device has: memory blocks; and a local bus connected to the memory blocks. Each memory block has: switches respectively provided between bit line pairs and the local bus and each of which is turned ON in response to a selection signal; a dummy local bus; first and second control circuits. The local bus and the dummy local bus are precharged to a first potential before a read operation. In the read operation, the first control circuit outputs the selection signal to a selected switch to electrically connect a selected bit line pair and the local bus, while the second control circuit supplies a second potential lower than the first potential to the dummy local bus. The first control circuit stops outputting the selection signal when a potential of the dummy local bus is decreased to a predetermined set potential that is between the first and second potentials.
公开/授权文献
- US20120327733A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2012-12-27
信息查询