Invention Grant
- Patent Title: Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same
- Patent Title (中): 形成相变层的方法和制造包括该相变层的相变存储器件的方法
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Application No.: US13752310Application Date: 2013-01-28
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Publication No.: US08557627B2Publication Date: 2013-10-15
- Inventor: Jin-Ho Oh , Jeong-Hee Park , Man-Sug Kang , Byoung-Deog Choi , Gyu-Hwan Oh , Hye-Young Park , Doo-Hwan Park
- Applicant: Jin-Ho Oh , Jeong-Hee Park , Man-Sug Kang , Byoung-Deog Choi , Gyu-Hwan Oh , Hye-Young Park , Doo-Hwan Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2009-0132290 20091229; KR10-2010-0125403 20101209
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
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