发明授权
- 专利标题： Contact resistivity reduction in transistor devices by deep level impurity formation
- 专利标题（中）： 深层杂质形成对晶体管器件的接触电阻率降低
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申请号： US12793046申请日： 2010-06-03
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公开(公告)号： US08557693B2公开(公告)日： 2013-10-15
- 发明人: Tak Hung Ning , Zhen Zhang
- 申请人： Tak Hung Ning , Zhen Zhang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Louis Percello
- 主分类号： H01L21/22
- IPC分类号： H01L21/22
摘要：
A method of forming a low resistance contact structure in a semiconductor device includes forming a doped semiconductor region in a semiconductor substrate; forming a deep level impurity region at an upper portion of the doped semiconductor region; activating dopants in both the doped semiconductor region and the deep level impurity region by annealing; and forming a metal contact over the deep level impurity region so as to create a metal-semiconductor interface therebetween.
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