Invention Grant
- Patent Title: Vapor deposition methods for forming a metal-containing layer on a substrate
- Patent Title (中): 在基板上形成含金属层的气相沉积方法
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Application No.: US12893807Application Date: 2010-09-29
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Publication No.: US08557697B2Publication Date: 2013-10-15
- Inventor: Bhaskar Srinivasan , John Smythe
- Applicant: Bhaskar Srinivasan , John Smythe
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant.
Public/Granted literature
- US20110021001A1 Vapor Deposition Methods for Forming a Metal-Containing Layer on a Substrate Public/Granted day:2011-01-27
Information query
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