发明授权
- 专利标题： Substrate processing apparatus and method of manufacturing a semiconductor device
- 专利标题（中）： 基板处理装置及半导体装置的制造方法
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申请号： US13242690申请日： 2011-09-23
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公开(公告)号： US08557720B2公开(公告)日： 2013-10-15
- 发明人: Tokunobu Akao , Unryu Ogawa , Masahisa Okuno , Shinji Yashima , Atsushi Umekawa , Kaichiro Minami
- 申请人： Tokunobu Akao , Unryu Ogawa , Masahisa Okuno , Shinji Yashima , Atsushi Umekawa , Kaichiro Minami
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Kokusai Electric, Inc.
- 当前专利权人： Hitachi Kokusai Electric, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Volpe and Koenig, P.C.
- 优先权： JP2010-241884 20101028; JP2011-143718 20110629
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; H01L21/42 ; H01L21/44
摘要：
A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed.
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