Invention Grant
- Patent Title: Method of inspecting pattern and inspecting instrument
- Patent Title (中): 检查模式和检验仪器的方法
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Application No.: US11518893Application Date: 2006-09-12
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Publication No.: US08558173B2Publication Date: 2013-10-15
- Inventor: Mari Nozoe , Hidetoshi Nishiyama , Shigeaki Hijikata , Kenji Watanabe , Koji Abe
- Applicant: Mari Nozoe , Hidetoshi Nishiyama , Shigeaki Hijikata , Kenji Watanabe , Koji Abe
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Hitachi, Ltd.,Hitachi Tokyo Electronics Co., Ltd.
- Current Assignee: Hitachi, Ltd.,Hitachi Tokyo Electronics Co., Ltd.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP11-343094 19991202
- Main IPC: G01N23/00
- IPC: G01N23/00

Abstract:
An electron beam apparatus equipped with a review function of a semiconductor wafer includes a scanning electron microscope to obtain image information of a semiconductor wafer, and an information processing apparatus to process the image information. The information processing apparatus includes a data input unit to receive positional information of a defect on the wafer, a storage for storing a plurality of image information of a position on the wafer corresponding to the positional information, and an image processing unit that retrieves any of the plurality of image information, and classifies the retrieved image information corresponding to the positional information depending on the type of defect.
Public/Granted literature
- US20070023658A1 Method of inspecting pattern and inspecting instrument Public/Granted day:2007-02-01
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