发明授权
- 专利标题: Method of inspecting pattern and inspecting instrument
- 专利标题(中): 检查模式和检验仪器的方法
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申请号: US11518893申请日: 2006-09-12
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公开(公告)号: US08558173B2公开(公告)日: 2013-10-15
- 发明人: Mari Nozoe , Hidetoshi Nishiyama , Shigeaki Hijikata , Kenji Watanabe , Koji Abe
- 申请人: Mari Nozoe , Hidetoshi Nishiyama , Shigeaki Hijikata , Kenji Watanabe , Koji Abe
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Hitachi, Ltd.,Hitachi Tokyo Electronics Co., Ltd.
- 当前专利权人: Hitachi, Ltd.,Hitachi Tokyo Electronics Co., Ltd.
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP11-343094 19991202
- 主分类号: G01N23/00
- IPC分类号: G01N23/00
摘要:
An electron beam apparatus equipped with a review function of a semiconductor wafer includes a scanning electron microscope to obtain image information of a semiconductor wafer, and an information processing apparatus to process the image information. The information processing apparatus includes a data input unit to receive positional information of a defect on the wafer, a storage for storing a plurality of image information of a position on the wafer corresponding to the positional information, and an image processing unit that retrieves any of the plurality of image information, and classifies the retrieved image information corresponding to the positional information depending on the type of defect.
公开/授权文献
- US20070023658A1 Method of inspecting pattern and inspecting instrument 公开/授权日:2007-02-01
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