发明授权
- 专利标题: Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process
- 专利标题(中): 使用改进的伪同时多离子注入工艺制造的半导体结构
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申请号: US12950416申请日: 2010-11-19
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公开(公告)号: US08558195B2公开(公告)日: 2013-10-15
- 发明人: Sarko Cherekdjian
- 申请人: Sarko Cherekdjian
- 申请人地址: US NY Corning
- 专利权人: Corning Incorporated
- 当前专利权人: Corning Incorporated
- 当前专利权人地址: US NY Corning
- 代理商 Ryan T. Hardee
- 主分类号: A61N5/00
- IPC分类号: A61N5/00
摘要:
Methods and apparatus provide for: a source simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system including an analyzer magnet, which cooperate to simultaneously: (i) accelerate the first and second plasma along an initial axis, (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis, which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis, which is transverse to the initial axis and the first axis; and a beam processing system operating to simultaneously direct the first and second ion beams toward a semiconductor wafer such that the first and second species of ions bombard an implantation surface of the semiconductor wafer to create an exfoliation layer therein.