发明授权
- 专利标题: Nanowire field effect transistors
- 专利标题(中): 纳米线场效应晶体管
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申请号: US13606365申请日: 2012-09-07
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公开(公告)号: US08558219B2公开(公告)日: 2013-10-15
- 发明人: Sarunya Bangsaruntip , Guy Cohen , Amlan Majumdar , Jeffrey W. Sleight
- 申请人: Sarunya Bangsaruntip , Guy Cohen , Amlan Majumdar , Jeffrey W. Sleight
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号: H01L21/335
- IPC分类号: H01L21/335 ; B82Y40/00 ; B82Y99/00
摘要:
A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire over a substrate, forming a liner material around a portion of the nanowire, forming a capping layer on the liner material, forming a first spacer adjacent to sidewalls of the capping layer and around portions of the nanowire, forming a hardmask layer on the capping layer and the first spacer, removing an exposed portion of the nanowire to form a first cavity partially defined by the gate material, epitaxially growing a semiconductor material on an exposed cross section of the nanowire in the first cavity, removing the hardmask layer and the capping layer, forming a second capping layer around the semiconductor material epitaxially grown in the first cavity to define a channel region, and forming a source region and a drain region contacting the channel region.
公开/授权文献
- US20130178019A1 Nanowire Field Effect Transistors 公开/授权日:2013-07-11