发明授权
US08558279B2 Non-planar device having uniaxially strained semiconductor body and method of making same
有权
具有单轴应变半导体本体的非平面器件及其制造方法
- 专利标题： Non-planar device having uniaxially strained semiconductor body and method of making same
- 专利标题（中）： 具有单轴应变半导体本体的非平面器件及其制造方法
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申请号： US12924232申请日： 2010-09-23
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公开(公告)号： US08558279B2公开(公告)日： 2013-10-15
- 发明人: Stephen M. Cea , Roza Kotlyar , Jack T. Kavalieros , Martin D. Giles , Tahir Ghani , Kelin J. Kuhn , Markus Kuhn , Nancy M. Zelick
- 申请人： Stephen M. Cea , Roza Kotlyar , Jack T. Kavalieros , Martin D. Giles , Tahir Ghani , Kelin J. Kuhn , Markus Kuhn , Nancy M. Zelick
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.