Invention Grant
US08558279B2 Non-planar device having uniaxially strained semiconductor body and method of making same
有权
具有单轴应变半导体本体的非平面器件及其制造方法
- Patent Title: Non-planar device having uniaxially strained semiconductor body and method of making same
- Patent Title (中): 具有单轴应变半导体本体的非平面器件及其制造方法
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Application No.: US12924232Application Date: 2010-09-23
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Publication No.: US08558279B2Publication Date: 2013-10-15
- Inventor: Stephen M. Cea , Roza Kotlyar , Jack T. Kavalieros , Martin D. Giles , Tahir Ghani , Kelin J. Kuhn , Markus Kuhn , Nancy M. Zelick
- Applicant: Stephen M. Cea , Roza Kotlyar , Jack T. Kavalieros , Martin D. Giles , Tahir Ghani , Kelin J. Kuhn , Markus Kuhn , Nancy M. Zelick
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.
Public/Granted literature
- US20120074464A1 Non-planar device having uniaxially strained semiconductor body and method of making same Public/Granted day:2012-03-29
Information query
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