Invention Grant
- Patent Title: Semiconductor photodetector structure and the fabrication method thereof
- Patent Title (中): 半导体光电探测器结构及其制造方法
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Application No.: US12542671Application Date: 2009-08-17
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Publication No.: US08558336B2Publication Date: 2013-10-15
- Inventor: Tzung-I Su , Bang-Chiang Lan , Chao-An Su , Hui-Min Wu , Ming-I Wang , Chien-Hsin Huang , Tzung-Han Tan , Min Chen , Meng-Jia Lin , Wen-Yu Su
- Applicant: Tzung-I Su , Bang-Chiang Lan , Chao-An Su , Hui-Min Wu , Ming-I Wang , Chien-Hsin Huang , Tzung-Han Tan , Min Chen , Meng-Jia Lin , Wen-Yu Su
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/18 ; H01L31/08
Abstract:
A semiconductor photodetector structure is provided. The structure includes a substrate, a photodetecting element and a semiconductor layer disposed on the photodetecting element. The substrate includes a first semiconductor material and includes a deep trench. The surface of the deep trench includes a first type dopant. The photodetecting element is disposed in the deep trench. The photodetecting element includes a second semiconductor material. The semiconductor layer includes a second type dopant.
Public/Granted literature
- US20110037133A1 Semiconductor Photodetector Structure and the Fabrication Method Thereof Public/Granted day:2011-02-17
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