发明授权
- 专利标题： Semiconductor photodetector structure and the fabrication method thereof
- 专利标题（中）： 半导体光电探测器结构及其制造方法
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申请号： US12542671申请日： 2009-08-17
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公开(公告)号： US08558336B2公开(公告)日： 2013-10-15
- 发明人: Tzung-I Su , Bang-Chiang Lan , Chao-An Su , Hui-Min Wu , Ming-I Wang , Chien-Hsin Huang , Tzung-Han Tan , Min Chen , Meng-Jia Lin , Wen-Yu Su
- 申请人： Tzung-I Su , Bang-Chiang Lan , Chao-An Su , Hui-Min Wu , Ming-I Wang , Chien-Hsin Huang , Tzung-Han Tan , Min Chen , Meng-Jia Lin , Wen-Yu Su
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232 ; H01L31/18 ; H01L31/08
摘要：
A semiconductor photodetector structure is provided. The structure includes a substrate, a photodetecting element and a semiconductor layer disposed on the photodetecting element. The substrate includes a first semiconductor material and includes a deep trench. The surface of the deep trench includes a first type dopant. The photodetecting element is disposed in the deep trench. The photodetecting element includes a second semiconductor material. The semiconductor layer includes a second type dopant.
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