Invention Grant
- Patent Title: Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface
- Patent Title (中): 旋转隧道磁性元件从阻挡层界面促进自由层晶体生长
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Application No.: US11800553Application Date: 2007-05-07
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Publication No.: US08559141B1Publication Date: 2013-10-15
- Inventor: Mahendra Pakala , Chando Park
- Applicant: Mahendra Pakala , Chando Park
- Applicant Address: US CA Fremont
- Assignee: Western Digital (Fremont), LLC
- Current Assignee: Western Digital (Fremont), LLC
- Current Assignee Address: US CA Fremont
- Main IPC: G11B5/33
- IPC: G11B5/33
Abstract:
A spin tunneling element includes a pinned layer, a barrier layer, and a free layer. The free layer includes a ferromagnetic layer including a ferromagnetic material that adjoins the barrier layer at a first interface. The free layer also includes a layer of amorphous material that adjoins the ferromagnetic layer at a second interface opposite the first interface. A first crystallization temperature of the ferromagnetic material at the first interface is lower than a second crystallization temperature at the second interface.
Information query
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