公开(公告)号：US08553371B2

公开(公告)日：2013-10-08

申请号：US12954508

申请日：2010-11-24

Applicant: Honglin Zhu ,  Liubo Hong ,  Hicham M. Sougrati ,  Quang Le ,  Jui-Lung Li ,  Chando Park

Inventor： Honglin Zhu ,  Liubo Hong ,  Hicham M. Sougrati ,  Quang Le ,  Jui-Lung Li ,  Chando Park

IPC: G11B5/39

CPC classification number: G11B5/3163 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3932

Abstract: Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.

Abstract translation: 本文的实施方案通常涉及TMR读取器及其制造方法。 本文讨论的实施例公开了TMR读取器，其利用了避免在传感器结构上以及硬偏置层上使用DLC层的结构。 传感器结构上的封盖结构用作传感器结构的保护层和CMP停止层。 硬偏置封盖结构既用作硬偏置层的保护结构又用作CMP停止层。 没有DLC的封盖结构减少了第二屏蔽层中的凹口的形成，使得第二屏蔽层基本上是平的。

公开(公告)号：US08194365B1

公开(公告)日：2012-06-05

申请号：US12553897

申请日：2009-09-03

Applicant: Qunwen Leng ,  Chando Park ,  Yimin Guo ,  Christian Kaiser ,  Mahendra Pakala ,  Sining Mao

Inventor： Qunwen Leng ,  Chando Park ,  Yimin Guo ,  Christian Kaiser ,  Mahendra Pakala ,  Sining Mao

IPC: G11B5/39

CPC classification number: G11B5/3906 ,  G01R33/098 ,  H01L43/08 ,  H01L43/10

Abstract: A method and system for providing a magnetic structure in magnetic transducer is described. The magnetic structure includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a first magnetic layer, a second magnetic layer, and a magnetic insertion layer between the first magnetic layer and the second magnetic layer. The first magnetic layer has a first magnetostriction. The second magnetic layer has a second magnetostriction opposite to the first magnetostriction. The magnetic insertion layer provides a growth texture barrier between the first magnetic layer and the second magnetic layer.

Abstract translation: 描述了一种用于在磁换能器中提供磁结构的方法和系统。 磁结构包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层包括在第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和磁性插入层。 第一磁性层具有第一磁致伸缩。 第二磁性层具有与第一磁致伸缩相反的第二磁致伸缩。 磁性插入层在第一磁性层和第二磁性层之间提供生长结构屏障。

公开(公告)号：US20120127603A1

公开(公告)日：2012-05-24

申请号：US12953233

申请日：2010-11-23

Applicant: Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Sangmun Oh ,  Chando Park ,  Chang-Man Park

Inventor： Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Sangmun Oh ,  Chando Park ,  Chang-Man Park

IPC: G11B21/02 ,  B05D5/00 ,  G11B5/127

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121

Abstract: According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.

Abstract translation: 根据一个实施例，磁头包括具有晶体结构的阻挡层，阻挡层上方的第一磁性层，第一磁性层上方的磁性插入层和磁性插入层上方的第二磁性层，第二磁性层 层具有纹理的面心立方（fcc）结构。 第一磁性层包括具有晶体结构的高自旋极化磁性材料，并且与第二磁性层的结晶结构相比，结晶的结晶特性与阻挡层的晶体结构更相似，并且磁性插入层包括具有 与阻挡层的晶体结构相比，晶体结构和结晶特性更类似于第二磁性层的晶体结构。 根据更多实施例描述附加的磁头结构和制造磁头的方法。

公开(公告)号：US08537502B1

公开(公告)日：2013-09-17

申请号：US12363525

申请日：2009-01-30

Applicant: Chando Park ,  Qunwen Leng ,  Sangmun Oh ,  Mahendra Pakala

Inventor： Chando Park ,  Qunwen Leng ,  Sangmun Oh ,  Mahendra Pakala

IPC: G11B5/127

CPC classification number: G11B5/3116 ,  G01R33/093 ,  G11B5/147 ,  G11B5/3906 ,  G11B5/3929 ,  H01F10/30 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1193

Abstract: A method and system for providing a magnetic transducer is described. The method and system include providing a magnetic structural barrier layer and a crystalline magnetic layer on the magnetic structural barrier layer. The magnetic structural barrier layer may reside on a shield. The method and system also include providing a nonmagnetic layer on the crystalline magnetic layer. A pinning layer is provided on the nonmagnetic layer. Similarly, a pinned layer is provided on the pinning layer. The pinning layer is magnetically coupled with the pinned layer. The method and system also include providing a free layer and a nonmagnetic spacer layer between the pinned layer and the free layer.

公开(公告)号：US08381391B2

公开(公告)日：2013-02-26

申请号：US12493102

申请日：2009-06-26

Applicant: Chando Park ,  Qunwen Leng ,  Mahendra Pakala

Inventor： Chando Park ,  Qunwen Leng ,  Mahendra Pakala

IPC: G11B5/127 ,  H04R31/00

CPC classification number: G11B5/127 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  F27D7/06 ,  F27D19/00 ,  G01R33/098 ,  G11B5/3109 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/303 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A method for providing a magnetic recording transducer is described. The method includes providing a pinned layer for a magnetic element. In one aspect, a portion of a tunneling barrier layer for the magnetic element is provided. The magnetic recording transducer annealed is after the portion of the tunneling barrier layer is provided. The annealing is at a temperature higher than room temperature. A remaining portion of the tunneling barrier layer is provided after the annealing. In another aspect, the magnetic transducer is transferred to a high vacuum annealing apparatus before annealing the magnetic transducer. In this aspect, the magnetic transducer may be annealed before any portion of the tunneling barrier is provided or after at least a portion of the tunneling barrier is provided. The annealing is performed in the high vacuum annealing apparatus. A free layer for the magnetic element is also provided.

Abstract translation: 描述了一种用于提供磁记录换能器的方法。 该方法包括提供用于磁性元件的钉扎层。 在一个方面，提供了用于磁性元件的隧道势垒层的一部分。 退火后的磁记录传感器在提供隧道势垒层的部分之后。 退火温度高于室温。 在退火之后提供隧道势垒层的剩余部分。 另一方面，在对磁换能器退火之前，将磁换能器转移到高真空退火装置。 在这方面，在提供隧道势垒的任何部分之前或者在提供至少一部分隧道势垒之后，磁换能器可以被退火。 在高真空退火装置中进行退火。 还提供了用于磁性元件的自由层。

公开(公告)号：US20120127616A1

公开(公告)日：2012-05-24

申请号：US12954508

申请日：2010-11-24

Applicant: HONGLIN ZHU ,  Liubo Hong ,  Hicham M. Sougrati ,  Quang Le ,  Jui-Lung Li ,  Chando Park

Inventor： HONGLIN ZHU ,  Liubo Hong ,  Hicham M. Sougrati ,  Quang Le ,  Jui-Lung Li ,  Chando Park

IPC: G11B5/33 ,  B44C1/22 ,  B05D5/12

CPC classification number: G11B5/3163 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3932

Abstract: Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.

Abstract translation: 本文的实施方案通常涉及TMR读取器及其制造方法。 本文讨论的实施例公开了使用避免在传感器结构上以及硬偏压层上使用DLC层的结构的TMR读取器。 传感器结构上的封盖结构用作传感器结构的保护层和CMP停止层。 硬偏置封盖结构既用作硬偏置层的保护结构又用作CMP停止层。 没有DLC的封盖结构减少了第二屏蔽层中的凹口的形成，使得第二屏蔽层基本上是平的。

公开(公告)号：US08755152B1

公开(公告)日：2014-06-17

申请号：US12236833

申请日：2008-09-24

Applicant: Chando Park ,  Qunwen Leng ,  Min Zhou ,  Sangmun Oh ,  Mahendra Pakala

Inventor： Chando Park ,  Qunwen Leng ,  Min Zhou ,  Sangmun Oh ,  Mahendra Pakala

IPC: G11B5/39

CPC classification number: G11B5/398 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912 ,  H01F10/3272

Abstract: A method and system for providing a magnetic transducer is described. The method and system include providing a magnetic shield, an insertion layer on the magnetic shield, an antiferromagnetic (AFM) layer, a pinned layer magnetically coupled with the AFM layer, a nonmagnetic spacer layer, and a free layer. The magnetic shield has a texture and a grain size. The insertion layer has a thickness that is sufficiently large that the AFM layer is magnetically decoupled from the magnetic shield and sufficiently small that the AFM layer is structurally coupled with the magnetic shield. The pinned layer resides between the AFM layer and the nonmagnetic spacer layer. The nonmagnetic spacer layer resides between the free layer and the pinned layer.

Abstract translation: 描述了一种用于提供磁换能器的方法和系统。 该方法和系统包括提供磁屏蔽，磁屏蔽上的插入层，反铁磁（AFM）层，与AFM层磁耦合的钉扎层，非磁性间隔层和自由层。 磁屏蔽具有纹理和晶粒尺寸。 插入层具有足够大的厚度，使得AFM层与磁屏蔽磁去耦合并且足够小，使得AFM层在结构上与磁屏蔽耦合。 钉扎层位于AFM层和非磁性间隔层之间。 非磁性间隔层位于自由层和钉扎层之间。

公开(公告)号：US08611055B1

公开(公告)日：2013-12-17

申请号：US12534091

申请日：2009-07-31

Applicant: Mahendra Pakala ,  Rongfu Xiao ,  Chando Park

Inventor： Mahendra Pakala ,  Rongfu Xiao ,  Chando Park

IPC: G11B5/33

CPC classification number: G11B5/11 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3929

Abstract: A method of producing a magnetoresistive read head and a tunneling magnetoresistive read head produced thereby are disclosed. A shield layer is provided. A magnetic etch-stop layer is formed over the shield layer, where the magnetic etch-stop layer comprises a nonmagnetic metal and a soft magnetic material with overall property still being magnetically soft. A sensor stack is formed over the magnetic etch-stop layer. A patterned mask layer is formed over the sensor stack. Material from a portion of the sensor stack not covered by the patterned mask is removed.

Abstract translation: 公开了一种制造由此制造的磁阻读取头和隧道磁阻读取头的方法。 提供屏蔽层。 在屏蔽层上形成磁性蚀刻停止层，其中磁性蚀刻停止层包括非磁性金属和总体性能仍然软磁性的软磁性材料。 传感器堆叠形成在磁性蚀刻停止层上。 在传感器堆叠上形成图案化掩模层。 去除了未被图案化掩模覆盖的传感器堆叠的部分的材料。

公开(公告)号：US08559141B1

公开(公告)日：2013-10-15

申请号：US11800553

申请日：2007-05-07

Applicant: Mahendra Pakala ,  Chando Park

Inventor： Mahendra Pakala ,  Chando Park

IPC: G11B5/33

CPC classification number: G11B5/3909 ,  G01R33/098 ,  H01L43/08

Abstract: A spin tunneling element includes a pinned layer, a barrier layer, and a free layer. The free layer includes a ferromagnetic layer including a ferromagnetic material that adjoins the barrier layer at a first interface. The free layer also includes a layer of amorphous material that adjoins the ferromagnetic layer at a second interface opposite the first interface. A first crystallization temperature of the ferromagnetic material at the first interface is lower than a second crystallization temperature at the second interface.

Abstract translation: 自旋隧穿元件包括钉扎层，阻挡层和自由层。 自由层包括铁磁层，其包括在第一界面处与阻挡层相邻的铁磁材料。 自由层还包括在与第一界面相对的第二界面处邻接铁磁层的非晶材料层。 第一界面处的铁磁材料的第一结晶温度低于第二界面处的第二结晶温度。

公开(公告)号：US08427791B2

公开(公告)日：2013-04-23

申请号：US12953233

申请日：2010-11-23

Applicant: Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Sangmun Oh ,  Chando Park ,  Chang-Man Park

Inventor： Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Sangmun Oh ,  Chando Park ,  Chang-Man Park

IPC: G11B5/39

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121

Abstract: According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.

Abstract translation: 根据一个实施例，磁头包括具有晶体结构的阻挡层，阻挡层上方的第一磁性层，第一磁性层上方的磁性插入层和磁性插入层上方的第二磁性层，第二磁性层 层具有纹理的面心立方（fcc）结构。 第一磁性层包括具有晶体结构的高自旋极化磁性材料，并且与第二磁性层的结晶结构相比，结晶的结晶特性与阻挡层的晶体结构更相似，并且磁性插入层包括具有 与阻挡层的晶体结构相比，晶体结构和结晶特性更类似于第二磁性层的晶体结构。 根据更多实施例描述附加的磁头结构和制造磁头的方法。