发明授权
US08560922B2 Bad block management for flash memory 有权
闪存的坏块管理

Bad block management for flash memory
摘要:
Bad block management for flash memory including a method for storing data. The method includes receiving a write request that includes write data. A block of memory is identified for storing the write data. The block of memory includes a plurality of pages. A bit error rate (BER) of the block of memory is determined and expanded write data is created from the write data in response to the BER exceeding a BER threshold. The expanded write data is characterized by an expected BER that is lower than the BER threshold. The expanded write data is encoded using an error correction code (ECC). The encoded expanded write data is written to the block of memory.
公开/授权文献
信息查询
0/0