发明授权
- 专利标题: Bad block management for flash memory
- 专利标题(中): 闪存的坏块管理
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申请号: US13040531申请日: 2011-03-04
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公开(公告)号: US08560922B2公开(公告)日: 2013-10-15
- 发明人: John A. Bivens , Michele M. Franceschini , Ashish Jagmohan
- 申请人: John A. Bivens , Michele M. Franceschini , Ashish Jagmohan
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Dwayne Nelson
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
Bad block management for flash memory including a method for storing data. The method includes receiving a write request that includes write data. A block of memory is identified for storing the write data. The block of memory includes a plurality of pages. A bit error rate (BER) of the block of memory is determined and expanded write data is created from the write data in response to the BER exceeding a BER threshold. The expanded write data is characterized by an expected BER that is lower than the BER threshold. The expanded write data is encoded using an error correction code (ECC). The encoded expanded write data is written to the block of memory.
公开/授权文献
- US20120226963A1 BAD BLOCK MANAGEMENT FOR FLASH MEMORY 公开/授权日:2012-09-06
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