发明授权
- 专利标题: Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
- 专利标题(中): 用于提升硅单晶的硅玻璃坩埚及其制造方法
-
申请号: US12647634申请日: 2009-12-28
-
公开(公告)号: US08562739B2公开(公告)日: 2013-10-22
- 发明人: Kazuhiro Harada , Satoshi Kudo
- 申请人: Kazuhiro Harada , Satoshi Kudo
- 申请人地址: JP Akita
- 专利权人: Japan Super Quartz Corporation
- 当前专利权人: Japan Super Quartz Corporation
- 当前专利权人地址: JP Akita
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: JP2008-335810 20081229
- 主分类号: C30B15/04
- IPC分类号: C30B15/04
摘要:
A silica glass crucible used for pulling up a silicon single crystal and made from natural silica a raw material is provided with a region within a certain range from the center of a bottom section of the crucible and up to 0.5 mm deep from an inner surface and which substantially does not include gas bubbles, wherein an average value of a concentration of Al included in a region within the certain range from the center of the bottom section of the crucible and up to 0.5 mm deep from the inner surface is 30 ppm or more and 150 ppm or less. In the case where the inner layer of the crucible bottom section is formed in this way, dents in the inner surface are prevented and the generation of gas bubbles is reduced.